Photoconductivity of textured γ-In2Se3-xTex (0 ≤ x ≤ 0.5) thin films

被引：13

作者：

Emziane, M ^{[1
]}

Le Ny, R ^{[1
]}

机构：

[1] Univ Nantes, Fac Sci & Tech, LPIO, Nantes, France

来源：

THIN SOLID FILMS | 2000年 / 366卷 / 1-2期

关键词：

semiconductors; indium chalcogenides; ternary compounds; polycrystalline films; crystalline quality; photoconductivity;

D O I：

10.1016/S0040-6090(00)00753-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Textured thin films of gamma-In2Se3 and gamma-In-2(Se,Te)(3) have been prepared by alternate thermal evaporation of In and (Se,Te) layers on glass substrates. The crystallization of the as-deposited films was performed by post-deposition heat treatment in neutral atmosphere. Photoconductivity measurements were performed on films of both compounds in order to study the effect of crystalline quality and Te on the photoconductive behaviour of the films. It has been shown for gamma-In2Se3 that the photocurrent is higher in films with good texture and large grains than in the films with less better quality. Moreover, the photocurrent is found to be about two orders of magnitude higher in gamma-In-2(Se,Te)(3) films with Te amount up to 10 at.%. On the other hand the variation of the photocurrent with incident photon energy allowed us to determine the energy gap E-g of both compounds and to confirm the E-g lowering by introducing Te. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：191 / 195

页数：5

共 13 条

[1]

Aruchamy A., 1992, Photoelectrochemistry and Photovoltaics of Layered Semiconductors (Physics and Chemistry of Materials with Low-Dimensional Structures, 14)

[2] X-RAY, REFLECTION HIGH ELECTRON-ENERGY DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF INSE AND GAMMA-IN2SE3 THIN-FILMS GROWN BY MOLECULAR-BEAM DEPOSITION [J].