Estimation of the isotope effect on the lattice thermal conductivity of group IV and group III-V semiconductors

被引:530
作者
Morelli, DT [1 ]
Heremans, JP
Slack, GA
机构
[1] Delphi Res Labs, Shelby Township, MI 48315 USA
[2] Rensselaer Polytech Inst, Troy, NY 12180 USA
关键词
D O I
10.1103/PhysRevB.66.195304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The isotope effect on the lattice thermal conductivity for group IV and group III-V semiconductors is calculated using the Debye-Callaway model modified to include both transverse and longitudinal phonon modes explicitly. The frequency and temperature dependences of the normal and umklapp phonon-scattering rates are kept the same for all compounds. The model requires as adjustable parameters only the longitudinal and transverse phonon Gruneisen constants and the effective sample diameter. The model can quantitatively account for the observed isotope effect in diamond and germanium but not in silicon. The magnitude of the isotope effect is predicted for silicon carbide, boron nitride, and gallium nitride. In the case of boron nitride the predicted increase in the room-temperature thermal conductivity with isotopic enrichment is in excess of 100%. Finally, a more general method of estimating normal phonon-scattering rate coefficients for other types of solids is presented.
引用
收藏
页码:1953041 / 1953049
页数:9
相关论文
共 38 条
[21]   PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J].
NILSSON, G ;
NELIN, G .
PHYSICAL REVIEW B, 1971, 3 (02) :364-&
[22]   Influence of isotopic content on diamond thermal conductivity [J].
Novikov, NV ;
Podoba, AP ;
Shmegera, SV ;
Witek, A ;
Zaitsev, AM ;
Denisenko, AB ;
Fahrner, WR ;
Werner, M .
DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) :1602-1606
[23]   THERMAL-CONDUCTIVITY OF DIAMOND BETWEEN 170 AND 1200-K AND THE ISOTOPE EFFECT [J].
OLSON, JR ;
POHL, RO ;
VANDERSANDE, JW ;
ZOLTAN, A ;
ANTHONY, TR ;
BANHOLZER, WF .
PHYSICAL REVIEW B, 1993, 47 (22) :14850-14856
[24]   SOME ASPECTS OF THE THERMAL-CONDUCTIVITY OF ISOTOPICALLY ENRICHED DIAMOND SINGLE-CRYSTALS [J].
ONN, DG ;
WITEK, A ;
QIU, YZ ;
ANTHONY, TR ;
BANHOLZER, WF .
PHYSICAL REVIEW LETTERS, 1992, 68 (18) :2806-2809
[25]  
Ositinskaya T.D., 1992, SVERKHTVERDYE MAT, V14, P27
[26]  
Peierls R, 1929, ANN PHYS-BERLIN, V3, P1055
[27]   INFLUENCE OF F-CENTERS ON THE LATTICE THERMAL CONDUCTIVITY IN LIF [J].
POHL, RO .
PHYSICAL REVIEW, 1960, 118 (06) :1499-1508
[28]  
Pomeranchuk I, 1941, J PHYS-USSR, V4, P259
[29]   THERMAL-EXPANSION OF ALKALI-HALIDES FROM 70 TO 570 K [J].
RAPP, JE ;
MERCHANT, HD .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :3919-3923
[30]   Thermal conductivity of isotopically enriched silicon [J].
Ruf, T ;
Henn, RW ;
Asen-Palmer, M ;
Gmelin, E ;
Cardona, M ;
Pohl, HJ ;
Devyatych, GG ;
Sennikov, PG .
SOLID STATE COMMUNICATIONS, 2000, 115 (05) :243-247