Thermal conductivity of isotopically enriched silicon

被引：168

作者：

Ruf, T

Henn, RW

Asen-Palmer, M

Gmelin, E

Cardona, M

Pohl, HJ

Devyatych, GG

Sennikov, PG

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] VITCON Projectconsult GmbH, D-07745 Jena, Germany

[3] Russian Acad Sci, Inst Chem Highly Pure Subst, Nizhnii Novgorod 603600, Russia

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 05期

关键词：

semiconductors; heat conduction; phonons;

D O I：

10.1016/S0038-1098(00)00172-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By means of a steady-state heat-flow technique, we have measured the thermal conductivity in a bulk crystal of highly enriched (99.8588%) Si-28 for temperatures between 2 and 310 K. Maximum values of about 30 000 W m(-1) K-1 for K are found around 20 K. This is six times larger than in natural silicon and even exceeds the maximum in diamond with natural isotope abundance. At room temperature, we obtain a thermal conductivity enhancement of almost 60% compared to natural Si. Our results agree well with theoretical predictions. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：243 / 247

页数：5

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