Real-time measurements of stress relaxation in InGaAs/GaAs

被引：23

作者：

Beresford, R ^{[1
]}

Yin, J ^{[1
]}

Tetz, K ^{[1
]}

Chason, E ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520 degrees C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. (C) 2000 American Vacuum Society. [S0734-211X(00)01403-7].

引用

页码：1431 / 1434

页数：4

共 8 条

[1] Measurements of stress evolution during thin film deposition [J].