Enhanced diffusion in silicon processing

被引：37

作者：

Cowern, N ^{[1
]}

Rafferty, C

机构：

[1] Philips Res Labs, Eindhoven, Netherlands

[2] Univ Aarhus, DK-8000 Aarhus C, Denmark

[3] Univ Southampton, Southampton SO9 5NH, Hants, England

[4] Lucent Technol Bell Labs, Silicon Proc Res Dept, Murray Hill, NJ 07974 USA

来源：

MRS BULLETIN | 2000年 / 25卷 / 06期

关键词：

D O I：

10.1557/mrs2000.97

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. However, the shrinking feature sizes in silicon technology require that diffusion lengths must also be reduced. At low temperatures, transient diffusion driven by implant damage becomes the dominant driving force of dopant diffusion. A number of unexpected consequences ensue, including large displacements at low temperatures, diffusion of buried profiles after near-surface implantation, and dopant pileup at the surface, all of which have serious effects in devices.

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页码：39 / 44

页数：6

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