Optical and structural properties of ZnSxSe1-x thin films deposited by thermal evaporation

被引：16

作者：

Ashraf, M. ^{[1
]}

Akhtar, S. M. J. ^{[1
]}

Mehmood, M. ^{[2
]}

Qayyum, A. ^{[3
]}

机构：

[1] Opt Labs, Islamabad, Pakistan

[2] Pakistan Inst Engn & Appl Sci, Islamabad, Pakistan

[3] Pakistan Inst Nucl Sci & Technol, Div Phys, Islamabad, Pakistan

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2009年 / 48卷 / 01期

关键词：

ZNSE FILMS; CONSTANTS; GROWTH; SULFUR; LAYERS;

D O I：

10.1051/epjap/2009114

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The ZnS(x)Se1-x (0 <= x <= 1) films were deposited on soda lime glass substrates by thermal evaporation technique. Optical and structural properties of these films were compared with the ZnSxSe1-x films deposited by various other techniques. XRD measurement showed that ZnSxSe1-x films are polycrystalline in nature with the preferred orientation along [ 111]. It was observed that the lattice constant decreases and the optical energy band gap increases with the sulfur content of the film. These results are in good agreement with the properties of ZnSxSe1-x films deposited by various other methods. Additionally, it was observed that the refractive index of a ZnS(x)Se(1-x)film decreases with increasing sulfur content. The results reported in this paper suggest that the lattice constants, optical energy band gap and refractive index of ZnSxSe1-x film can be tailored for a specific application by selecting suitable value of x.

引用

页码：10501p1 / 10501p4

页数：4

共 20 条

[1]

Properties of Cu-doped low resistive ZnSe films deposited by two-sourced evaporation [J].