CARRIER TRANSPORT-PROPERTIES OF IODINE-DOPED (ZNS)(3)(ZNSE)(42) ORDERED ALLOYS GROWN BY ATOMIC LAYER EPITAXY

Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe) 42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtained at room temperature in the slightly I-doped sample (3×1016 cm-3). This high mobility is due to the elimination of structural fluctuations by forming a two-dimensional ordered structure, which was confirmed by the satellite peaks in x-ray diffraction spectra. Blue band-edge emissions were found to be dominant at 35 K and room temperature in photoluminescence spectra. These results indicate that the formation of defects was minimized in these crystals by the layer-by-layer structure and the low-temperature growth at 200°C. © 1995 American Institute of Physics.