LOW-TEMPERATURE GROWTH OF ZNSE-BASED PSEUDOMORPHIC STRUCTURES BY HYDROGEN-RADICAL-ENHANCED CHEMICAL VAPOR-DEPOSITION

We investigated the growth of crystals with pseudomorphic structures such as ZnSe-ZnSxSe1-x strained-layer superlattices (SLSs) and short-period SLSs (ZnSe)m-(ZnS)m, by means of hydrogen-radical-enhanced chemical vapor epitaxy (HRCVD). Atomic layer epitaxy (ALE) was realized by a self-limiting action in depositing the Zn monolayer and by removal of an excess amount of Se with the aid of atomic hydrogen in depositing the Se monolayer. Evidence obtained from measurements of photoluminescence and X-ray diffraction spectra led us to the conclusion that both pseudomorphic structures, in good order, are successfully made by this technique at a low temperature, 200-degrees-C, under precise control of chemical reactions on the growing surface.