MONOLAYER EPITAXY OF ZNSE ON GAAS SUBSTRATES BY ALTERNATING ADSORPTION OF DIETHYLZINC AND HYDROGENSELENIDE

Growth of ZnSe films on GaAs using an alternating supply of diethylzinc (DEZ) and H2Se in low-pressure MOVPE has been examined as a function of substrate temperature (Ts). Growth rate in the low-Ts region (less than 350°C) increased monotonically with increasing DEZ flow-rate. At temperatures between 350 and 400°C growth rate per operational cycle saturated at the monolayer thickness. In the high-Ts region, more than 400°C, growth rate per cycle saturated at less than a monolayer. Growth kinetics resulted from the strong reaction between DEZ and H2Se on the growing surface. ZnSe layers grown by monolayer unit exhibited high purity and crystallinity. © 1989.