PHOTOLUMINESCENCE PROPERTIES OF ZNSE SINGLE CRYSTALLINE FILMS GROWN BY ATOMIC LAYER EPITAXY

被引：43

作者：

YAO, T

TAKEDA, T

WATANUKI, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 23期

关键词：

D O I：

10.1063/1.96834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1615 / 1616

页数：2

相关论文

共 11 条

[1] BOUND-EXCITON LUMINESCENCE OF CU-DOPED ZNSE
HUANG, SM
NOZUE, Y
IGAKI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L420 - L422
[2] OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE
MERZ, JL
SHIEVER, JW
NASSAU, K
KUKIMOTO, H
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 545 - &
[3] PAIR SPECTRA AND SHALLOW ACCEPTORS IN ZNSE
MERZ, JL
NASSAU, K
SHIEVER, JW
[J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1444 - 1452
[4] TAKEDA T, 1985, 17TH C SOL STAT DEV, P221
[5] GROWTH-PROCESS IN ATOMIC LAYER EPITAXY OF ZN CHALCOGENIDE SINGLE CRYSTALLINE FILMS ON (100) GAAS
YAO, T
TAKEDA, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 160 - 162
[6] PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
MAKITA, Y
MAEKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L741 - L744
[7] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
OGURA, M
MATSUOKA, S
MORISHITA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501
[8] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 31 - 40
[9] YAO T, 1985, TECHNOLOGY PHYSICS M, pCH10
[10] GROWTH OF UNDOPED, HIGH-PURITY, HIGH-RESISTIVITY ZNSE LAYERS BY MOLECULAR-BEAM EPITAXY
YONEDA, K
HISHIDA, Y
TODA, T
ISHII, H
NIINA, T
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1300 - 1302