PREPARATION AND PROPERTIES OF (ZNS)(3)(ZNSE)(42) ORDERED ALLOYS FABRICATED BY PLASMA-ENHANCED LOW-TEMPERATURE GROWTH TECHNIQUE

Gallium-doped ZnSe and ordered alloys, (ZnS)(3)(ZnSe)(42), were grown on a GaAs substrate. Low-temperature growth (T-g=200 degrees C) of ZnSe and ZnS films was performed by hydrogen radical-enhanced chemical vapor deposition (HRCVD) using triethylgallium (TEGa) as the dopant source. Atomic hydrogen generated by RF plasma is used to enhance the formation of the depositing species. Two-dimensional ordered structures on the atomic scale were achieved by atomic layer epitaxy (ALE). In photoluminescence (PL) measurements of doped ZnSe film, the emission intensity attributed to the neutral donor-bound exciton increases with increasing TEGa flow rates. Strong blue PL emission was observed for the doped ZnS e film with optimized TEGa flow rate at room temperature. In X-ray diffraction (XRD) spectra of the ordered alloys, satellite peaks due to the layered structure were observed. A carrier concentration of 3 x 10(16) cm(-3) and a Hall mobility of 154 cm(2)/Vs were obtained for the ordered alloy, (ZnS)(3)(ZnSe)(42), at room temperature.