CONTROLLED CONDUCTIVITY IN IODINE-DOPED ZNSE FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：24

作者：

YOSHIKAWA, A

NOMURA, H

YAMAGA, S

KASAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1223 / 1229

页数：7

相关论文

共 21 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS
BHARGAVA, RN
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 15 - 26
[2] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE
FUJITA, S
MATSUDA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L360 - L362
[3] SUPERIORITY OF GROUP VII ELEMENTS OVER GROUP-III ELEMENTS AS DONOR DOPANTS IN MOCVD ZNSE
KAMATA, A
UEMOTO, T
OKAJIMA, M
HIRAHARA, K
KAWACHI, M
BEPPU, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 285 - 289
[4] KAMATA A, 1986, 18TH C SOL STAT DEV, P651
[5] SCREENING AND STARK EFFECTS DUE TO IMPURITIES ON EXCITONS IN CDS
KUKIMOTO, H
SHIONOYA, S
TOYOTOMI, S
MORIGAKI, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (01) : 110 - &
[6] ELECTRICAL AND LUMINESCENT PROPERTIES OF IN-DOPED ZNSE GROWN BY LOW-PRESSURE VAPOR-PHASE EPITAXY
MATSUMOTO, T
IIJIMA, T
KATSUMATA, Y
ISHIDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1736 - L1739
[7] Moss T.S, 1973, SEMICONDUCTOR OPTOEL, P48
[8] GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES
NIINA, T
MINATO, T
YONEDA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L387 - L389
[9] CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
OHKAWA, K
MITSUYU, T
YAMAZAKI, O
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3216 - 3221
[10] ANTIMONY-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
KLEIMAN, J
MAR, HA
SMITH, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2851 - 2853