High-performance planar light-emitting diodes

被引：23

作者：

Cecchini, M ^{[1
]}

Piazza, V

Beltram, F

Lazzarino, M

Ward, MB

Shields, AJ

Beere, HE

Ritchie, DA

机构：

[1] INFM, NEST, I-56126 Pisa, Italy

[2] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[3] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[4] Toshiba Res Europe Ltd, Cambridge CB4 0WE, England

[5] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1540244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed planar light-emitting diodes fabricated within a single high-mobility quantum well are demonstrated. Devices were fabricated by photolithography and wet chemical etching starting from p-type modulation-doped Al0.5Ga0.5As/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity, high external efficiency, and extremely short recombination times of the order of 50 ps. Time-resolved electroluminescence measurements demonstrate subnanosecond modulation time scale. (C) 2003 American Institute of Physics.

引用

页码：636 / 638

页数：3