A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

被引：36

作者：

Vaccaro, PO ^{[1
]}

Ohnishi, H ^{[1
]}

Fujita, K ^{[1
]}

机构：

[1] ATR, Adapt Commun Res Labs, Seika, Kyoto 61902, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A lateral p-n junction allows direct injection of electrons and holes in the active layer of devices such as laser diodes and can reduce carrier relaxation time and increase modulation bandwidth. Light-emitting diodes were made on patterned GaAs (311)A-oriented substrates by using a lateral p-n junction formed in GaAs-silicon-doped epilayers grown by molecular beam epitaxy. Good electroluminescence at room temperature was obtained for both GaAs single layers and GaAs/ AlGaAs multiple quantum well structures. (C) 1998 American Institute of Physics.

引用

页码：818 / 820

页数：3

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