Lateral tunneling devices on GaAs (111)A and (311)A patterned substrates grown by MBE using only silicon dopant

被引：23

作者：

Ohnishi, H

Hirai, M

Fujita, K

Watanabe, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

interband tunneling; tunneling transistor; lateral p-n junction; GaAs(111)A; GaAs(311)A; patterned substrate;

D O I：

10.1143/JJAP.35.1168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A lateral interband tunneling transistor with gate-controlled negative differential resistance characteristics is demonstrated for the first time on a GaAs(111)A patterned substrate. Si-doped GaAs layers are grown on GaAs(111)A and GaAs(311)A patterned substrates by molecular beam epitaxy to fabricate lateral p-n junctions. Both samples show interband tunneling diode characteristics. Furthermore, a gate electrode is fabricated on the (111)A sample. The lateral tunneling transistor shows a modulated peak current density that ranges from 0.41 to 0.90 mA/cm(2) by varying the gate voltage from -5.0 to 5.0 V at 77 K.

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页码：1168 / 1171

页数：4

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