SI DOPING AND MBE GROWTH OF GAAS ON TILTED (111)A SUBSTRATES

被引：47

作者：

SHIGETA, M ^{[1
]}

OKANO, Y ^{[1
]}

SETO, H ^{[1
]}

KATAHAMA, H ^{[1
]}

NISHINE, S ^{[1
]}

KOBAYASHI, K ^{[1
]}

FUJIMOTO, I ^{[1
]}

机构：

[1] NHK JAPAN BROADCASTING CORP,SCI & TECH RES LABS,SETAGAYA KU,TOKYO 157,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90986-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy of GaAs doped with Si on a vicinal surface of (111)A, (211)A and (311)A have been examined. The variations of the impurity concentrations are dependent on the growth conditions and are affected by the angle of the substrates. The impurity concentrations are compared with a model calculation which is based on microscopic surface structures and kinematical surface reactions. Growth modes are monitored by reflection high-energy electron diffraction intensity oscillations. A doping mechanism of Si atoms into GaAs films is proposed.

引用

页码：284 / 287

页数：4

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