ELECTROLUMINESCENCE FROM LATERAL P-N-JUNCTIONS GROWN ON (111)A GAAS PATTERNED SUBSTRATES

被引：14

作者：

INAI, M

YAMAMOTO, T

TAKEBE, T

WATANABE, T

机构：

[1] ATR Optical and Radio Communications Research Laboratories, Soraku-gun Kyoto, 619-02

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12A期

关键词：

MBE; (111)A GAAS; PATTERNED SUBSTRATE; LATERAL P-N JUNCTION; LIGHT EMISSION; ELECTROLUMINESCENCE;

D O I：

10.1143/JJAP.32.L1718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral p-n junctions were grown on (111)A GaAs patterned substrates by a plane selective doping method and electroluminescence (EL) properties of the lateral p-n junctions were investigated. EL was observed along the [011] line, and the line formed a triangular pattern on the substrate. The emission spectrum had a sharp peak at 870 nm at room temperature. Even though these p-n junctions were not optimized for LED structures, the emission intensity of EL was higher than that from p-n junctions of conventional structure. These characteristics are advantages of lateral p-n junctions grown on (111)A GaAs patterned substrates. These are the first observations of EL from (111)A GaAs lateral p-n junctions.

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收藏

页码：L1718 / L1721

页数：4

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