OPTICAL AND ELECTRICAL CHARACTERIZATION OF LATERAL P-N-JUNCTIONS ON GAAS (111)A PATTERNED SUBSTRATES

被引：15

作者：

FUJII, M

TAKEBE, T

YAMAMOTO, T

INAI, M

KOBAYASHI, K

机构：

[1] ATR Optical, Radio Communications Research Laboratories, Soraku-gun, Kyoto, 619-02, Seika-cho

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 02期

关键词：

D O I：

10.1016/0749-6036(92)90330-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lateral p-n junction structures in which a p-type (111)A equilateral triangle region is surrounded by three n-type slopes were formed by molecular beam epitaxial (MBE) growth of a Si-doped GaAs film on GaAs (111)A substrates. Ridge and groove triangles were subjected to measurements. Results of spatially-resolved cathodoluminescence (CL) measurements from a slope and at a corner are mainly presented. By comparing the optical and electrical characteristics of the ridge and groove triangles, it was made clear that the ridge triangle is suitable for carrier confinement in the p-type (111)A triangle region. © 1992.

引用

页码：167 / 170

页数：4

共 9 条

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