ELECTRICAL CHARACTERIZATION OF LATERAL P-N-JUNCTIONS GROWN ON (111)A GAAS NONPLANAR SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

INAI, M

YAMAMOTO, T

FUJII, M

TAKEBE, T

KOBAYASHI, K

机构：

[1] ATR Optical and Radio Communications Research Laboratories, Kyoto, 619-02, 2-2 Hikaridai, Seika-cho, Soraku-gun

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

(111)A GAAS; NONPLANAR SUBSTRATE; LATERAL P-N JUNCTION; C-V; GRADED JUNCTION; GA ADATOM MIGRATION; SI DELTA-DOPING; INTERBAND TUNNELING;

D O I：

10.1143/JJAP.32.523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics of lateral p-n junctions grown on (111)A GaAs nonplanar substrates by molecular beam epitaxy are investigated. According to current-voltage and capacitance-voltage measurements, it is clarified that uniformly Si-doped lateral p-n junctions have graded doping profiles at the intersection between the (111)A flat plane and (311)A side slope, and the lateral p-n interface becomes steeper with decreasing growth temperature. In the delta-doped lateral p-n junction, negative resistance is observed in the current-voltage characteristics. Assuming it is due to interband tunneling, we consider that the delta-doped lateral p-n junction has a steeper interface than the uniformly doped lateral p-n junctions. These junction characteristics are discussed in relation to the surface migration of Ga adatoms.

引用

页码：523 / 527

页数：5

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