Stacked Image Sensor With Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc Oxide Thin-Film Transistors to a Signal Readout Circuit

被引:65
作者
Aihara, Satoshi [1 ]
Seo, Hokuto [1 ]
Namba, Masakazu [1 ]
Watabe, Toshihisa [1 ]
Ohtake, Hiroshi [1 ]
Kubota, Misao [1 ]
Egami, Norifumi [1 ]
Hiramatsu, Takahiro [2 ]
Matsuda, Tokiyoshi [2 ]
Furuta, Mamoru [2 ]
Nitta, Hiroshi [2 ]
Hirao, Takashi [2 ]
机构
[1] Japan Broadcasting Corp NHK, Sci & Technol Res Labs, Tokyo 1578510, Japan
[2] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan
关键词
Organic photoconductive film; stacked image sensor; thin-film transistor (TFT); wavelength selectivity; zinc oxide (ZnO); DOUBLE-LAYER; ZNO TFTS; PHOTODETECTORS; PICKUP;
D O I
10.1109/TED.2009.2030607
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A vertically stacked image sensor composed of green (G)- and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) that uses a transparent zinc oxide (ZnO) channel to read out a signal generated in the organic film, was fabricated. The effective number of pixels of the ZnO-TFT circuits was 1410 (47 x 30), and their pitch was 600 mu m. The current on/off ratio and turn-on voltage of the ZnO-TFT were over 10(5) and 1.5 V, respectively. The G- and R-sensitive organic photoconductive films showed excellent wavelength selectivity: the peak wavelength of the G-sensitive film was 540 nm, and that of the R-sensitive one was 700 nm. A color image with a resolution corresponding to the number of pixels was obtained by a shooting experiment with the fabricated image sensor, which clearly demonstrated color separation in the depth direction of the image sensor, using a stacked structure of wavelength-selective organic films with ZnO-TFT readout circuits.
引用
收藏
页码:2570 / 2576
页数:7
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