Morphology control of highly-transparent indium tin oxide thin films prepared by a chlorine-reduced metallo-organic decomposition technique

被引:7
作者
Dippel, Ann-Christin
Schneller, Theodor
Gerber, Peter
Waser, Rainer
机构
[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52056 Aachen, Germany
[2] Res Ctr Julich, Inst Solid State Res, D-52425 Julich, Germany
关键词
indium tin oxide; chemical solution deposition; morphology evolution; transparent conductive oxide;
D O I
10.1016/j.tsf.2006.09.045
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
Indium tin oxide thin films were prepared by a chemical solution deposition route based on a one pot reaction of indium acetate, tin tetrachloride pentahydrate and propionic acid. The films were heat-treated in oxidising atmosphere and post-annealed in forming gas containing 10% hydrogen. It was found that the coating solution concentration exerted a major influence on the morphology of the films. Low-concentrated solutions yielded layers with columnar structure while higher molarities led to fine-grained granular films. Under optimised conditions, thin films of indium tin oxide exhibiting a resistivity of 1(.)10(-3) Omega cm were obtained. The transparency was determined to a high level of above 90% in the entire visible range of the spectrum. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3797 / 3801
页数:5
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