Retardation of oxidation in Co nanocolumns: Scanning tunneling microscopy study

被引：7

作者：

Singh, JP ^{[1
]}

Yang, GR ^{[1
]}

Lu, TM ^{[1
]}

Wang, GC ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1527980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation of Co nanocolumns grown by the glancing angle deposition technique was studied ex situ using scanning tunneling microscopy and spectroscopy. The normalized conductance (dI/dV)/(I/V) of a single nanocolumn shows a nonoxidized Co peak at about -0.7 eV corresponding to the 3d valence electrons which was absent in the conventional film. It is argued that a retardation of the oxidation occurred in the Co nanocolumn due to the lack of grain boundaries in the isolated nanocolumns. (C) 2002 American Institute of Physics.

引用

页码：4601 / 4603

页数：3

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