Germanium-silicon single crystal growth using an encapsulant in a silica ampoule

被引：16

作者：

Kadokura, K ^{[1
]}

Takano, Y ^{[1
]}

机构：

[1] SCI UNIV TOKYO,TAKANO LAB,NODA,CHIBA 278,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 171卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(96)00399-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we report the growth of Ge1-xSix single crystals with x varying from nearly 0 to 0.4 in one ingot by the liquid-encapsulated Bridgman and zone leveling methods using CaCl2 in a fused silica ampoule. We verified that CaCl2, which flows between the silica ampoule and the Ge-Si melt far temperatures above 800 degrees C, is the best encapsulant to prevent nucleation.

引用

页码：56 / 60

页数：5

共 6 条

[1]

ETOR H, 1990, 22 C SOL STAT DEV MA, P909

[2] CZOCHRALSKI GROWTH OF SIXGE1-X SINGLE-CRYSTALS [J].