THE MAXIMUM POSSIBLE CONVERSION EFFICIENCY OF SILICON-GERMANIUM THERMOELECTRIC GENERATORS

被引:301
作者
SLACK, GA
HUSSAIN, MA
机构
[1] General Electric RandD Center, Schenectady
关键词
D O I
10.1063/1.349385
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoelectric properties of N-type and P-type Si-Ge alloys have been reviewed and detailed calculations for the efficiency of a thermoelectric generator made from a 70% Si-30% Ge alloy have been made over the temperature range from 300 to 1300 K. A model employing one valence band and two conduction bands has been used. A generator of standard material, optimally doped, and infinitely segmented will have an efficiency of 12.1% operating over this range. If the lattice thermal conductivity can be reduced to its minimum value without upsetting the electrical properties, then the efficiency can be raised to an ultimate maximum of 23.3%. A more modest increase in efficiency to 14.7% could be obtained by a 2.4 volume percent of finely dispersed second-phase precipitates which would act as phonon scatterers. The utility/futility of GaP additions and grain-boundary scattering as methods to increase the efficiency is discussed.
引用
收藏
页码:2694 / 2718
页数:25
相关论文
共 128 条
[1]   LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B .
PHYSICAL REVIEW, 1963, 131 (05) :1906-&
[2]   THERMAL CONDUCTIVITY OF GE-SI ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B ;
BEERS, DS ;
DISMUKES, JP ;
CODY, GD .
PHYSICAL REVIEW, 1962, 125 (01) :44-&
[3]   GE-SI THERMOELECTRIC POWER GENERATOR [J].
ABELES, B ;
COHEN, RW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) :247-&
[4]  
ABRIKOSOV NK, 1969, SOV PHYS SEMICOND+, V2, P1468
[5]   EFFECTIVE MASSES OF HEAVY AND LIGHT HOLES IN GE AND SI [J].
ALSALEH, NA ;
DUBEY, KS .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :K9-K12
[6]   SEEBECK COEFFICIENT IN N-TYPE GERMANIUM-SILICON ALLOYS - COMPETITION REGION [J].
AMITH, A .
PHYSICAL REVIEW, 1965, 139 (5A) :1624-&
[7]  
AMITH A, 1964, 7TH P INT C PHYS SEM, P393
[8]  
ANDRIANOV DG, 1965, FIZ TVERD TELA, V6, P2244
[9]   ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].
ARORA, ND ;
HAUSER, JR ;
ROULSTON, DJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :292-295
[10]   ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].
BACCARANI, G ;
OSTOJA, P .
SOLID-STATE ELECTRONICS, 1975, 18 (06) :579-580