THE MAXIMUM POSSIBLE CONVERSION EFFICIENCY OF SILICON-GERMANIUM THERMOELECTRIC GENERATORS

被引:304
作者
SLACK, GA
HUSSAIN, MA
机构
[1] General Electric RandD Center, Schenectady
关键词
D O I
10.1063/1.349385
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoelectric properties of N-type and P-type Si-Ge alloys have been reviewed and detailed calculations for the efficiency of a thermoelectric generator made from a 70% Si-30% Ge alloy have been made over the temperature range from 300 to 1300 K. A model employing one valence band and two conduction bands has been used. A generator of standard material, optimally doped, and infinitely segmented will have an efficiency of 12.1% operating over this range. If the lattice thermal conductivity can be reduced to its minimum value without upsetting the electrical properties, then the efficiency can be raised to an ultimate maximum of 23.3%. A more modest increase in efficiency to 14.7% could be obtained by a 2.4 volume percent of finely dispersed second-phase precipitates which would act as phonon scatterers. The utility/futility of GaP additions and grain-boundary scattering as methods to increase the efficiency is discussed.
引用
收藏
页码:2694 / 2718
页数:25
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共 128 条
[41]  
FISTUL VI, 1964, FIZ TVERD TELA, V6, P753
[42]  
FISTUL VI, 1962, FIZ TVERD TELA, V4, P784
[43]  
FLEURIAL JP, 1989, UNPUB 5TH SIL GERM I
[44]   SECOND INDIRECT BAND-GAP IN SILICON [J].
FORMAN, RA ;
THURBER, WR ;
ASPNES, DE .
SOLID STATE COMMUNICATIONS, 1974, 14 (10) :1007-1010
[45]   TEMPERATURE DEPENDENCE OF DENSITY-OF-STATES EFFECTIVE MASS AND ELECTRONIC AND PHONON CONTRIBUTIONS TO THERMAL RESISTANCE OF DOPED SI-GE ALLOYS AT HIGH TEMPERATURES [J].
GAUR, NKS ;
BHANDARI, CM ;
VERMA, GS .
PHYSICAL REVIEW, 1966, 144 (02) :628-&
[46]   SEEBECK EFFECT IN GERMANIUM [J].
GEBALLE, TH ;
HULL, GW .
PHYSICAL REVIEW, 1954, 94 (05) :1134-1140
[47]   SEEBECK EFFECT IN SILICON [J].
GEBALLE, TH ;
HULL, GW .
PHYSICAL REVIEW, 1955, 98 (04) :940-947
[48]   ELECTRON MAGNETIC SUSCEPTIBILITY, PARAMAGNETIC RESONANCE, AND BAND STRUCTURE OF SILICON-RICH N-TYPE SILICON-GERMANIUM ALLOYS [J].
GEIST, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (01) :283-&
[49]   THE TRANSPORT-PROPERTIES OF BORON-DOPED AMORPHOUS-SILICON AND THEIR INTERPRETATION [J].
GHIASSY, F ;
JONES, DI ;
STEWART, AD .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (02) :139-152
[50]   THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].
GLASSBRENNER, CJ ;
SLACK, GA .
PHYSICAL REVIEW, 1964, 134 (4A) :1058-+