THE TRANSPORT-PROPERTIES OF BORON-DOPED AMORPHOUS-SILICON AND THEIR INTERPRETATION

被引：10

作者：

GHIASSY, F

JONES, DI

STEWART, AD

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 02期

关键词：

D O I：

10.1080/01418638508244277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 152

页数：14

共 9 条

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[3]

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[5]

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[6] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].

JONES, DI ;

COMBER, PGL ;

SPEAR, WE .

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[7] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J].

LECOMBER, PG ;

JONES, DI ;

SPEAR, WE .

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[8] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].

OVERHOF, H ;

BEYER, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04) :377-392

[9] A MODEL FOR THE ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].

OVERHOF, H ;

BEYER, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :433-450

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