FIELD-EFFECT AND THERMOELECTRIC-POWER ON BORON DOPED AMORPHOUS-SILICON

被引：30

作者：

JAN, ZS ^{[1
]}

BUBE, RH ^{[1
]}

KNIGHTS, JC ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：3278 / 3281

页数：4

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