Electrical properties of nonvolatile latches for new logic application

被引：6

作者：

Fujimori, Y ^{[1
]}

Nakamura, T ^{[1
]}

Takasu, H ^{[1
]}

机构：

[1] ROHM Co Ltd, Semicond R&D Headquarters, Ukyo Ku, Kyoto 6158585, Japan

来源：

INTEGRATED FERROELECTRICS | 2002年 / 47卷

关键词：

D O I：

10.1080/10584580215414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel nonvolatile latch with ferroelectric capacitors has been developed to reduce standby power of LSIs. This latch stores the data as a ferroelectric remanent polarization during power off without area penalty and operating speed degradation. Test circuits have been fabricated to confirm characteristics of the latch. The data retention and the stable recall procedure have been confirmed. This paper also describes scaling projection of this technique.

引用

页码：71 / 78

页数：8

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