Ferromagnetism in oxide semiconductors

被引：142

作者：

Chambers, S. A. ^{[1
]}

Droubay, T. C.

Wang, C. M.

Rosso, K. M.

Heald, S. M.

Schwartz, D. A.

Kittilstved, K. R.

Gamelin, D. R.

机构：

[1] Pacific NW Natl Lab, Fundamental Sci Directorate, Richland, WA 99352 USA

[2] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[3] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

MATERIALS TODAY | 2006年 / 9卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S1369-7021(06)71692-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Over the past five years, considerable work has been carried out in the exploration of candidate diluted oxide magnetic semiconductors with high Curie temperatures. Fueled by early experimental results and theoretical predictions, claims of ferromagnetism at and above room temperature in doped oxides have abounded. In general, neither the true nature of these materials nor the physical causes of the magnetism have been adequately determined. It is now apparent that these dilute magnetic systems are deceptively complex. We consider two well-characterized n-type magnetically doped oxide semiconductors and explore the relationship between donor electrons and ferromagnetism.

引用

页码：28 / 35

页数：8

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