Investigation of degradation of electrical and photoelectrical properties in TlBr crystals

被引:16
作者
Vaitkus, J
Gostilo, V
Jasinskaite, R
Mekys, A
Owens, A
Zatoloka, S
Zindulis, A
机构
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2734 Vilnius, Lithuania
[2] Balt Sci Instruments, LV-1005 Riga, Latvia
[3] European Space Agcy, ESTEC, Div Astrophys, NL-2200 AG Noordwijk, Netherlands
关键词
TlBr; ionizing radiation detectors; polarization phenomena; degradation;
D O I
10.1016/j.nima.2004.06.004
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The interest in TIBr as a detector material is due to its high average atomic number, high density and wide bandgap. The photon stopping power of TlBr crystals is greater than that of any of the semiconductors considered today, therefore this material is promising for X- and gamma-ray detector applications. However, the observed stability of TlBr radiation detectors is not good and therefore the investigation of degradation phenomena and improving the properties are important for the future of detectors. The results of investigation of electrical properties, photoconductivity and their degradation were investigated in TlBr single crystals. It is proposed that ionic conductivity creates a microinhomogeneity of the samples and this process is activated by electric field and by nonequilibrium carrier generation. The observed threshold type effects are related to the growth of structural defects. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:192 / 196
页数:5
相关论文
共 9 条
[1]  
BAVDAZ M, 1997, MAT RES SOC, V663, P565
[2]   Single detectors and pixel arrays based on TlBr [J].
Gostilo, V. ;
Owens, A. ;
Bavdaz, M. ;
Lisjutin, I. ;
Peacock, A. ;
Sipila, H. ;
Zatoloka, S. .
IEEE Transactions on Nuclear Science, 2002, 49 II (05) :2513-2516
[3]   Thallium bromide optical and radiation detectors for X-ray and gamma-ray spectroscopy [J].
Hitomi, K ;
Matsumoto, M ;
Muroi, O ;
Shoji, T ;
Hiratate, Y .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (05) :2526-2529
[4]   Characterization of thallium bromide crystals for radiation detector applications [J].
Hitomi, K ;
Matsumoto, M ;
Muroi, O ;
Shoji, T ;
Hiratate, Y .
JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :129-133
[5]   Radiation damage effects by 25MeV protons and thermal annealing effects on thallium bromide nuclear radiation detectors [J].
Hitomi, K ;
Shoji, T ;
Suehiro, T ;
Hiratate, Y .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (03) :213-217
[6]  
IJAZURRAHMAN R, 1984, PHYS REV B, V29, P3500
[7]   On the development of compound semiconductor thallium bromide detectors for astrophysics [J].
Owens, A ;
Bavdaz, M ;
Lisjutin, I ;
Peacock, A ;
Sipila, H ;
Zatoloka, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2) :413-417
[8]   PRESSURE AND TEMPERATURE DEPENDENCES OF THE IONIC CONDUCTIVITIES OF THE THALLOUS HALIDES TLCL, TLBR, AND TLI [J].
SAMARA, GA .
PHYSICAL REVIEW B, 1981, 23 (02) :575-586
[9]   Cation conductivity in mixed thallium halides [J].
Secco, EA ;
Secco, RA .
SOLID STATE IONICS, 1999, 118 (1-2) :37-42