Characterization of thallium bromide crystals for radiation detector applications

被引：46

作者：

Hitomi, K ^{[1
]}

Matsumoto, M ^{[1
]}

Muroi, O ^{[1
]}

Shoji, T ^{[1
]}

Hiratate, Y ^{[1
]}

机构：

[1] Tohoku Inst Technol, Dept Elect, Taihaku Ku, Sendai, Miyagi 9828577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 225卷 / 2-4期

关键词：

characterization; travelling solvent zone growth; semiconducting materials;

D O I：

10.1016/S0022-0248(01)00834-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, thallium bromide (TIBr) crystals have been investigated for radiation detector applications. Thallium bromide crystals have been grown by the traveling molten zone method using materials purified by the conventional zone refining method. The grown crystals have been characterized in terms of their structural properties, stoichiometry and surface properties. Charge transport properties of the grown crystals have also been evaluated by estimating the carrier mobilities and lifetimes of electrons and holes. Room temperature radiation detectors have been fabricated from the grown crystals by depositing gold electrodes on the surfaces that had been treated by mechanical polishing and chemical etching. An energy resolution of 37.2 keV full-width at half-maximum (5.6%) has been recorded fur 662 keV gamma -rays with a TIBr detector at room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：129 / 133

页数：5

共 11 条

[1] Improved performance lead iodide nuclear radiation detectors [J].