A physical model for the kink effect in InAlAs/InGaAs HEMT's

被引：88

作者：

Somerville, MH ^{[1
]}

Ernst, A

del Alamo, JA

机构：

[1] Vassar Coll, Dept Phys & Astron, Poughkeepsie, NY 12604 USA

[2] McKinsey & Co Inc, Mexico City, DF, Mexico

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 05期

基金：

美国国家科学基金会;

关键词：

HEMT; InAlAs; InGaAs; kink effect;

D O I：

10.1109/16.841222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new model for the the kink effect in In-AlAs/InGaAs HEMT's, The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures the many of the observed behaviors of the kink, including the kink's dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink's de characteristics, its time evolution in the nanosecond range, and its dependence on illumination.

引用

页码：922 / 930

页数：9

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