Depth distribution of Cu, Ag and An ions implanted at low energy into insulators

The binary collision approximation based on the dynamic computer code DYNA has been employed to simulate the implantation of metal ions (Cu, Ag and Au) into silica, soda-lime silicate glass and aluminium oxide. Dependencies of elemental concentrations for low ion energies of 30, 60 and 100 keV have been obtained at doses of 0.1, 0.3, 0.6 and x 10(16) ion/cm(2). Target sputtering and a change of the near-surface layer composition due to cascade atom mixing is considered. Dynamic formation of non-symmetrical depth distributions of implanted ions during irradiation was computed and discussions related to the influence of implantation conditions on the shape of the depth distribution are presented. (C) 2000 Elsevier Science B.V. All rights reserved.