Enhanced resolution of poly(methyl methacrylate) electron resist by thermal processing

被引：23

作者：

Arjmandi, Nima ^{[1
]}

Lagae, Liesbet ^{[1
]}

Borghs, Gustaaf ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期

关键词：

amorphous state; electron resists; high-temperature effects; nanostructured materials; polymer films; surface roughness; BEAM LITHOGRAPHY; POLY(METHYLMETHACRYLATE) RESIST; FABRICATION; POLYMETHYLMETHACRYLATE; EXPOSURE; PILLARS; LIMITS; LINES;

D O I：

10.1116/1.3167367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Granular nanostructure of electron beam resist had limited the ultimate resolution of electron beam lithography. The authors report a thermal process to achieve a uniform and homogeneous amorphous thin film of polymethyl methacrylate electron resist. This thermal process consists of a short time-high temperature backing process in addition to precisely optimized development process conditions. Using this novel process, they patterned arrays of holes with diameter smaller than 5 nm and line edge roughness and surface roughness of the resist reduced to 1 nm and 100 pm, respectively. In addition, etch resistance of the resist verified and the resist pattern transferred to a metal thin film.

引用

页码：1915 / 1918

页数：4

共 22 条

[1]

RESOLUTION LIMITS FOR ELECTRON-BEAM LITHOGRAPHY [J].