10-NM RESOLUTION ELECTRON-BEAM LITHOGRAPHY

被引：40

作者：

CRAIGHEAD, HG ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4430 / 4435

页数：6

共 15 条

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[2]

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[5]

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[6]

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[7]

CRAIGHEAD HG, 1982, J APPL PHYS, V53, P7168

[8] ELECTRON-BEAM LITHOGRAPHY FROM 20 TO 120 KEV WITH A HIGH-QUALITY BEAM [J].

HOWARD, RE ;

CRAIGHEAD, HG ;

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MANKIEWICH, PM ;

FELDMAN, M .

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[9]

HOWARD RE, 1982, VLSI ELECTRONICS MIC, V5

[10] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J].

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