Theory of semiconductor surface reconstruction

被引:116
作者
Srivastava, GP
机构
[1] Department of Physics, University of Exeter, Exeter EX4 4QL, Stocker Road
关键词
D O I
10.1088/0034-4885/60/5/002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a review of semiconductor surface reconstruction. Experimental and theoretical results on atomic geometry, electronic states, phonon modes, and bonding are presented for clean cleaved, clean epitaxially grown, overlayer covered, surfactant mediated epitaxially grown, and defect induced reconstructed semiconductor surfaces. Energetic aspects of reconstructions are discussed using empirical as well as first-principles theoretical approaches.
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页码:561 / 613
页数:53
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