Phosphorus Doped Zn1-xMgxO Nanowire Arrays

被引：52

作者：

Lin, S. S. ^{[1
]}

Hong, J. I. ^{[1
]}

Song, J. H. ^{[1
]}

Zhu, Y. ^{[2
]}

He, H. P. ^{[2
]}

Xu, Z. ^{[2
]}

Wei, Y. G. ^{[1
]}

Ding, Y. ^{[1
]}

Snyder, R. L. ^{[1
]}

Wang, Z. L. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

NANO LETTERS | 2009年 / 9卷 / 11期

关键词：

THIN-FILMS; ZNO; EPITAXY; GROWTH;

D O I：

10.1021/nl902067a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the growth of phosphorus doped Zn1-xMgxO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn0.92Mg0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of similar to 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.

引用

页码：3877 / 3882

页数：6

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