Observation of the linear Stark effect in a single acceptor in Si

被引：46

作者：

Calvet, L. E.

Wheeler, R. G.

Reed, M. A.

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.98.096805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g(1/2)=1.14 and g(3/2)=1.72 and a linear Stark splitting 2 Delta of 0.1 meV.

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页数：4

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