Observation of the linear Stark effect in a single acceptor in Si

被引：46

作者：

Calvet, L. E.

Wheeler, R. G.

Reed, M. A.

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.98.096805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g(1/2)=1.14 and g(3/2)=1.72 and a linear Stark splitting 2 Delta of 0.1 meV.

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页数：4

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共 29 条

[21] EXPERIMENTAL STUDY OF ZEEMAN SPLITTING OF BORON LEVELS IN SILICON [J].

MERLET, F ;

PAJOT, B ;

ARCAS, P ;

JEANLOUIS, AM .

PHYSICAL REVIEW B, 1975, 12 (08) :3297-3317

[22] SPECTROSCOPY OF THE SOLID-STATE ANALOGS OF THE HYDROGEN-ATOM - DONORS AND ACCEPTORS IN SEMICONDUCTORS [J].

RAMDAS, AK ;

RODRIGUEZ, S .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (12) :1297-1387

[23] ZERO-DIMENSIONAL STATES IN MACROSCOPIC RESONANT-TUNNELING DEVICES [J].

SAKAI, JW ;

MAIN, PC ;

BETON, PH ;

LASCALA, N ;

GEIM, AK ;

EAVES, L ;

HENINI, M .

APPLIED PHYSICS LETTERS, 1994, 64 (19) :2563-2565

[24] Stark effect in shallow impurities in Si [J].

Smit, GDJ ;

Rogge, S ;

Caro, J ;

Klapwijk, TM .

PHYSICAL REVIEW B, 2004, 70 (03) :035206-1

[25] EFFECTIVE-MASS THEORETICAL APPROACH TO OPTICAL + MICROWAVE PHENOMENA IN SEMICONDUCTORS I . ZEEMAN EFFECT OF ACCEPTORS IN SI + GE [J].

SUZUKI, K ;

OKAZAKI, M ;

HASEGAWA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) :930-&

[26] SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING [J].

TUCKER, JR ;

WANG, CL ;

CARNEY, PS .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :618-620

[27] On the modeling and design of Schottky field-effect transistors [J].

Vega, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) :866-874

[28] Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier lowering [J].

Vega, Reinaldo A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (07) :1593-1600

[29] Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors [J].

Wang, C ;

Snyder, JP ;

Tucker, JR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1174-1176