Anomalous behavior of the dielectric constant of hafnium silicates: A first principles study

被引：15

作者：

Pignedoli, Carlo A. ^{[1
]}

Curioni, Alessandro ^{[1
]}

Andreoni, Wanda ^{[1
]}

机构：

[1] IBM Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.98.037602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an extensive ab initio study of the structural and dielectric properties of hafnium silicates HfxSi1-xO2 that accounts for the observed anomalous dependence on composition of the static dielectric constant in the entire x range. The results reveal that this complex behavior reflects that of the structural development with x, from silica to hafnia, and clarify how different growth processes can also lead to scattered sets of data. Several simple models proposed thus far to explain part of the experimental data are shown to be inadequate. It is argued that silicate layers with low hafnium content form at the HfO2/Si interface and play a crucial role in preserving high electron mobility in the channel.

引用

页数：4

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