Photodefinable organofunctionalized inorganic dielectric for organic thin film transistors

The authors present an organic functionalized inorganic dielectric for use as a gate dielectric of organic thin film transistors (OTFTs). This inorganic-organic hybrid material is not only solution processable but also directly definable by photolithography. The gate dielectric can thus be patterned in the process of forming the dielectric layer. The organic functional moieties incorporated into inorganic siloxane backbone allow photocurability and development in aqueous solvents. Fabrication of pentacene-based OTFTs with the gate dielectric results in a device performance that is better than that of the device fabricated with spin-coatable inorganic dielectric such as spin on glass. (c) 2007 American Institute of Physics.