Low voltage operation in picene thin film field-effect transistor and its physical characteristics

被引：29

作者：

Kaji, Yumiko ^{[1
]}

Kawasaki, Naoko ^{[1
]}

Lee, Xuesong ^{[1
]}

Okamoto, Hideki ^{[2
]}

Sugawara, Yasuyuki ^{[3
]}

Oikawa, Shohei ^{[3
]}

Ito, Akio ^{[3
]}

Okazaki, Hiroyuki ^{[1
]}

Yokoya, Takayoshi ^{[1
]}

Fujiwara, Akihiko ^{[4
]}

Kubozono, Yoshihiro ^{[1
]}

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan

[3] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan

[4] Japan Adv Inst Sci & Technol, Kanazawa, Ishikawa 9230062, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 18期

基金：

日本科学技术振兴机构;

关键词：

coatings; dielectric materials; gas sensors; organic compounds; organic field effect transistors; photoelectron spectra; polymers; silicon compounds; thin film transistors; thin films; X-ray diffraction; PENTACENE;

D O I：

10.1063/1.3257373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO(2) gate dielectrics coated by two polymers, Cytop (TM) and polystyrene. The picene FETs operated in low absolute gate voltage vertical bar V(G)vertical bar below 15 V for Cytop (TM) coated SiO(2) and 30 V for polystyrene coated SiO(2) gate dielectrics, and they showed a significant O(2) gas sensing effect down to similar to 10 ppm. Photoemission spectrum clarified that O(2) molecules penetrate into the thin films at O(2)/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO(2).

引用

页数：3

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