High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

被引：34

作者：

Kaji, Yumiko ^{[1
]}

Mitsuhashi, Ryoji ^{[1
]}

Lee, Xuesong ^{[1
]}

Okamoto, Hideki ^{[2
]}

Kambe, Takashi ^{[3
]}

Ikeda, Naoshi ^{[3
]}

Fujiwara, Akihiko ^{[4
]}

Yamaji, Minoru ^{[5
]}

Omote, Kenji ^{[6
]}

Kubozono, Yoshihiro ^{[1
]}

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[3] Okayama Univ, Dept Phys, Okayama 7008530, Japan

[4] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

[5] Gunma Univ, Dept Chem & Chem Biol, Kiryu, Gunma 3768515, Japan

[6] Ideal Star Inc, Sendai, Miyagi 9893204, Japan

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 03期

关键词：

Organic thin film transistors; Conducting polymer electrodes; Bottom contact structure; C-60; Picene;

D O I：

10.1016/j.orgel.2009.01.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

C-60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PED-OT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C-60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility mu value of 0.41 cm(2\) V-1 s(-1), while the picene thin film FET showed p-channel enhancement-type characteristics with the p of 0.61 cm(2) V-1 s(-1). The p values recorded for C-60 and picene thin film FETs are comparable to those for C-60 and picene thin film FETs with Au electrodes. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：432 / 436

页数：5

共 18 条

[1] Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions [J].

Cosseddu, P. ;

Bonfiglio, A. ;

Salzmann, I. ;

Rabe, J. P. ;

Koch, N. .

ORGANIC ELECTRONICS, 2008, 9 (02) :191-197

[2] C-60 THIN-FILM TRANSISTORS [J].

HADDON, RC ;

PEREL, AS ;

MORRIS, RC ;

PALSTRA, TTM ;

HEBARD, AF ;

FLEMING, RM .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123

[3]

Halik M, 2002, ADV MATER, V14, P1717, DOI 10.1002/1521-4095(20021203)14:23<1717::AID-ADMA1717>3.0.CO

[4]

2-G

[5] Examination of band bending at buckminsterfullerene (C60)/metal interfaces by the Kelvin probe method [J].

Hayashi, N ;

Ishii, H ;

Ouchi, Y ;

Seki, K .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3784-3793

[6] Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer [J].

Hong, Kipyo ;

Yang, Sang Yoon ;

Yang, Chanwoo ;

Kim, Se Hyun ;

Choi, Danbi ;

Park, Chan Eon .

ORGANIC ELECTRONICS, 2008, 9 (05) :864-868

[7] N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit [J].

Kanbara, T ;

Shibata, K ;

Fujiki, S ;

Kubozono, Y ;

Kashino, S ;

Urisu, T ;

Sakai, M ;

Fujiwara, A ;

Kumashiro, R ;

Tanigaki, K .

CHEMICAL PHYSICS LETTERS, 2003, 379 (3-4) :223-229

[8] High mobility of pentacene field-effect transistors with polyimide gate dielectric layers [J].

Kato, Y ;

Iba, S ;

Teramoto, R ;

Sekitani, T ;

Someya, T ;

Kawaguchi, H ;

Sakurai, T .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3789-3791

[9]

KAWASAKI N, APPL PHYS L IN PRESS

[10] Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].

Kobayashi, S ;

Takenobu, T ;

Mori, S ;

Fujiwara, A ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583

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