Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer

被引：83

作者：

Hong, Kipyo ^{[1
]}

Yang, Sang Yoon ^{[1
]}

Yang, Chanwoo ^{[1
]}

Kim, Se Hyun ^{[1
]}

Choi, Danbi ^{[1
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

organic transistor; OFET; contact resistance; injection barrier; pentacene; UPS; GIXD;

D O I：

10.1016/j.orgel.2008.06.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We coated gold electrodes with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in order to reduce the contact resistance in pentacene organic field-effect transistors (OFETs). The crystallinity of the pentacene layers on the gold electrodes was found to increase upon coating the substrates with PEDOT:PSS, whereas the hole-injection barrier between the organic semiconductor and the metal electrode decreased from 0.85 to 0.14 eV. The increased crystallinity and reduced hole-injection barrier resulted in a significant reduction of the contact resistance in the pentacene OFETs, thus leading to an improvement of the field-effect mobility of the devices (from 0.031 to 0.218 cm2/Vs). © 2008 Elsevier B.V. All rights reserved.

引用

页码：864 / 868

页数：5

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