Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer

被引：83

作者：

Hong, Kipyo ^{[1
]}

Yang, Sang Yoon ^{[1
]}

Yang, Chanwoo ^{[1
]}

Kim, Se Hyun ^{[1
]}

Choi, Danbi ^{[1
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

organic transistor; OFET; contact resistance; injection barrier; pentacene; UPS; GIXD;

D O I：

10.1016/j.orgel.2008.06.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We coated gold electrodes with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in order to reduce the contact resistance in pentacene organic field-effect transistors (OFETs). The crystallinity of the pentacene layers on the gold electrodes was found to increase upon coating the substrates with PEDOT:PSS, whereas the hole-injection barrier between the organic semiconductor and the metal electrode decreased from 0.85 to 0.14 eV. The increased crystallinity and reduced hole-injection barrier resulted in a significant reduction of the contact resistance in the pentacene OFETs, thus leading to an improvement of the field-effect mobility of the devices (from 0.031 to 0.218 cm2/Vs). © 2008 Elsevier B.V. All rights reserved.

引用

页码：864 / 868

页数：5

共 25 条

[11] Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor [J].

Ihm, Kyuwook ;

Kim, Bongsoo ;

Kang, Tai-Hee ;

Kim, Ki-Jeong ;

Joo, Min Ho ;

Kim, Tae Hyeong ;

Yoon, Sang Soo ;

Chung, Sukmin .

APPLIED PHYSICS LETTERS, 2006, 89 (03)

[12] Growth of pentacene on clean and modified gold surfaces [J].

Kaefer, Daniel ;

Ruppel, Lars ;

Witte, Gregor .

PHYSICAL REVIEW B, 2007, 75 (08)

[13] Polymorphism in pentacene thin films on SiO2 substrate [J].

Kakudate, Toshiyuki ;

Yoshimoto, Noriyuki ;

Saito, Yoshio .

APPLIED PHYSICS LETTERS, 2007, 90 (08)

[14] Enhancement of hole injection in pentacene organic thin-film transistor of O2 plasma-treated Au electrodes [J].

Kim, Woong-Kwon ;

Hong, Kihyon ;

Leea, Jong-Lam .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

[15] Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism [J].

Koch, N ;

Kahn, A ;

Ghijsen, J ;

Pireaux, JJ ;

Schwartz, J ;

Johnson, RL ;

Elschner, A .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :70-72

[16] High-performance bottom electrode organic thin-film transistors [J].

Kymissis, I ;

Dimitrakopoulos, CD ;

Purushothaman, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1060-1064

[17] Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors [J].

Lee, Hwa Sung ;

Cho, Jeong Ho ;

Kim, Woong-Kwon ;

Lee, Jong-Lam ;

Cho, Kilwon .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (08) :H239-H242

[18] Organic field-effect transistors with reduced contact resistance [J].

Maeda, Takahiko ;

Kato, Hisato ;

Kawakami, Haruo .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[19] Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility [J].

Pesavento, Paul V. ;

Puntambekar, Kanan P. ;

Frisbie, C. Daniel ;

McKeen, John C. ;

Ruden, P. Paul .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[20] Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature [J].

Pesavento, PV ;

Chesterfield, RJ ;

Newman, CR ;

Frisbie, CD .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) :7312-7324

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