Lattice location of N in ZnSe by channeling-NRA

The lattice location of N in ZnSe has been investigated by nuclear reaction analysis (NRA) in combination with ion channeling technique. We have improved the detection limit of N to 1 x 10(17) atoms/cm(3) using the nuclear reaction N-15 (p, alpha) C-12 without significant crystalline damage. Molecular beam epitaxy (MBE) grown ZnSe thin films implanted with N-15 ions (dose = 1 x 10(14) cm(-2)) were investigated. It was found that similar to 35% of N is in the substitutional sites and that the fraction in the Zn sites and in the Se sites is almost the same in the as-implanted sample. We have also found that the lattice location of N was changed by annealing al 500 degrees C for 60 min and similar to 15% of N move to the tetrahedral interstitial sites. (C) 1997 Elsevier Science B.V.