Light induced luminescence centers in porous SiC prepared from nano-crystalline SiC grown on Si by hot filament chemical vapor deposition

被引：14

作者：

Chen, ZM ^{[1
]}

Ma, JP

Yu, MB

Wang, JN

Ge, WK

Woo, PW

机构：

[1] Xian Univ Sci & Technol, Dept Appl Elect, Xian 710048, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 2-3期

关键词：

SiC; photoluminescence; porous; anodization;

D O I：

10.1016/S0921-5107(00)00358-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intense photoluminescence (PL) was observed at room temperature from porous SiC samples prepared in electrochemical anodization from nano-crystalline SIC thin films grown on Si (100) substrates by hot filament chemical vapor deposition. Raman scattering spectroscopy and high-resolution transmission electron microscopy confirmed the nano-crystalline structure of the host films. For the porous samples formed under weaker anodization conditions, it was found that prolonged irradiation with ultraviolet (UV) light from a He-Cd laser (325 nm, 10 mW can induce an enhanced new PL band and change the peak energy from 1.9 eV to 2.1 eV at room temperature. A defect model is suggested to explain the UV light induced PL change in porous SiC. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：180 / 183

页数：4

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