On the thermal and optical properties of ZnSe and doped ZnSe crystals grown by PVT

被引:43
作者
Sankar, N
Ramachandran, K
机构
[1] Yadava Coll, Inst Phys, Madurai 625014, Tamil Nadu, India
[2] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
关键词
defects; substrates; growth from vapor; ZnSe : P; infrared devices;
D O I
10.1016/S0022-0248(02)01982-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Single crystals of ZnSe, phosphorus-doped ZnSe and phosphorus with Gallium-doped ZnSe have been grown by physical vapour transport technique. The thermal properties like thermal diffusivity, effusivity and conductivity are studied using photoacoustic spectroscopy and differential scanning calorimetry, for the use of substrate. Their optical properties are also studied using Raman. photoluminescence and photocurrent for the study of the site symmetry of the phosphorus. Our measurements reveal the possibility of phosphorus going to deep level thus reducing to C-3v level. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:157 / 165
页数:9
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