High-quality InAlN/GaN hetero structures grown by metal-organic vapor phase epitaxy

被引：19

作者：

Hiroki, M. ^{[1
]}

Yokoyama, H. ^{[1
]}

Watanabe, N. ^{[1
]}

Kobayashi, T. ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Photon Labs, High Speed Devices & Technol Lab, Atsugi, Kanagawa 2430198, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 40卷 / 4-6期

关键词：

GaN; InAlN; heterostructures; nitride semiconductor;

D O I：

10.1016/j.spmi.2006.09.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We fabricated high-quality InAlN/GaN heterostructures by metal-organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm(2)/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N-s) for the first time. N-s increased from 1.0 x 10(12) to 2.7 x 10(13) cm(-2) when the Al composition increased from 0.78 to 0.89. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：214 / 218

页数：5

共 9 条

[1]

Ambacher O, 1999, PHYS STATUS SOLIDI B, V216, P381, DOI 10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO

[2]

2-O

[3] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111) [J].