InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

被引：20

作者：

Katz, O ^{[1
]}

Mistele, D

Meyler, B

Bahir, G

Salzman, J

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Microelect Res Ctr, IL-32000 Haifa, Israel

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 20期

关键词：

D O I：

10.1049/el:20045980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlN/GaN based HFETs are demonstrated, which allow us to engineer polarisation induced charges. The InxAl1-xN/GaN heterostructures were grown with x = 0.04 to x = 0.15. Measured 2DEG Hall mobility was 480 and 750 cm(2)/Vs at 300K and 10K, respectively, and carrier concentration reached 4 x 10(13) cm(-2) at room temperature. The threshold voltage and peak transconductance shifted towards positive gate values, as well as a decrease in the drain current with In content increase. This change originates from polarisation difference reduction between GaN and InAlN. The 0.7 mum gate device had f(t) and f(max) of 11 and 13 GHz, respectively.

引用

页码：1304 / 1305

页数：2

共 8 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[2] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[3] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].

Carlin, JF ;

Ilegems, M .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670

[4] Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors [J].

Ibbetson, JP ;

Fini, PT ;

Ness, KD ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :250-252

[5] Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors [J].

Katz, O ;

Bahir, G ;

Salzman, J .

APPLIED PHYSICS LETTERS, 2004, 84 (20) :4092-4094

[6] Electron mobility in an AlGaN/GaN two-dimensional electron gas I - Carrier concentration dependent mobility [J].

Katz, O ;

Horn, A ;

Bahir, G ;

Salzman, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (10) :2002-2008

[7] InAlN/(In)GaN high electron mobility transistors:: some aspects of the quantum well heterostructure proposal [J].

Kuzmík, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (06) :540-544

[8] The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs [J].

Vetury, R ;

Zhang, NQQ ;

Keller, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :560-566

← 1 →